impurity levels
英 [ɪmˈpjʊərəti ˈlevlz]
美 [ɪmˈpjʊrəti ˈlevlz]
网络 杂质能级
双语例句
- Recovery operations should be adequately controlled so impurity levels do not increase over time.
应该对回收操作进行充分的控制，从而使杂质不会随着时间积累。 - A study of isolated impurity levels in doped semiconductors
掺杂半导体中孤立杂质能级的研究 - Deep Impurity Levels in Silicon
硅中的深杂质能级 - Basing on the density-functional theory, the paper presents a method of calculating the isolated impurity levels in doped semiconductors.
提出一种计算掺杂半导体中孤立杂质能级的方法，该方法建立在密度函数理论基础之上。 - Zone-Variational Method for Calculating Impurity Levels in Semiconductors
计算半导体中杂质能级的分区变分方法 - The impurity levels among the Fermi energy mainly caused by Ce atom.
Ce原子掺入后所产生的杂质能级对费米能级附近的能级结构产生了较大影响； - Deep Impurity Levels in Silicon under Hydrostatic Pressure
流体静压力下的Si中的深杂质能级 - The results show that the Cantor set structure of electronic spectra in the almost periodic systems is destroyed in both the disordered cases, but Ihe former may-create new impurity levels in the forbidden band, and the latter mainly broadens the original energy bands.
两种类型的无序都将破坏准周期系统的Cantor集合型的能谱结构，但前者会在原有的禁带处产生杂质能级，后者主要引起原有能带轮廓的展宽。 - A simple model about transition impurities in semiconductors is proposed, and the impurity energy levels and wave functions produced by substitutional and interstitial atoms in silicon are calculated by Green's function method.
本文提出了半导体中过渡元素杂质的一个简单模型，用格林函数方法计算了硅中替代和间隙原子产生的杂质能级和波函数。 - Finally, the chemical trend and some experimental facts of transition impurity energy levels are qualitatively explained.
最后定性地说明了过渡元素杂质能级的化学趋势和一些实验事实。 - Electric parameters including resistivity, mobility, and free carrier concentration are measured at low temperatures for n-type 6H-SiC from China and Cree corporation. Their impurity concentration and levels are obtained from the fitting data of FCCS.
测试了国产和美国Cree公司生产的n型6H-SiC低温下的电学参数，包括电阻率、迁移率和自由载流子浓度，并用FCCS软件数据拟合分析得到两种SiC的杂质浓度和能级。 - This paper presents the requirements on impurity levels of nuclear grade packing made of flexible graphite, indicates the drawback of localized nuclear grade packing and the direction of later research and development.
论述了核级柔性石墨填料中有害元素含量的规定，指出了国产核级柔性石墨填料的不足与研发方向。 - Because of using low Z coating materials, the conventional first wall construction materials and techniques can be retained and plasma impurity levels can be reduced.
由于使用低Z涂层材料可使传统的结构材料和技术保持不变并能降低等离子体杂质，因而为设计提供了灵活性。 - Calculation on deep impurity levels of transition metals in GaAs
GaAs中过渡金属深杂质能级的计算 - The impurity energy levels in semiconductors
半导体中的杂质能级 - The electron transitions from the impurity levels to the levels above the Fermi level may be responsible for the small visible light absorption peak observed in experiment.
电子跃迁从缺陷能级到费米能级可以解释实验上观测到可见光吸收峰。 - Based on this relationship, impurity levels of frequently used transition metal ions in rutile-TiO2, III-V and II-VI semiconductors and some perovskite ternary oxides are calculated, which are in accordance with available experimental values.
基于此关系计算了常用的过渡金属离子在金红石相Ti02、Ⅲ-Ⅴ和Ⅱ-Ⅵ半导体以及几种钙钛矿型三元氧化物中的杂质能级。 - Doping behavior of exotic ions entering the lattice determines the structure of doped crystals, and impurity energy levels determine functional properties of doped crystals.
杂质离子进入晶格时的掺杂行为决定了掺杂无机晶体的结构，而杂质能级决定掺杂无机晶体的许多功能性质。 - A quantitative relationship was established between impurity levels of transition metal ions in inorganic crystals and basic atomic or bond parameters such as EN and bond length.
论文建立了过渡金属离子在无机晶体中的杂质能级与电负性、键长等基本原子或化学键参数之间的定量关系。 - The band structure reveals the form of impurity levels due to the substitutional impurity in semiconductor matrix, the conductivity is higher than that of the non-doped model.
掺杂模型的能带结构显示，由于在半导体母体中进行杂质原子取代而形成了杂质能级，电导率都高于未掺杂的。 - Therefore, in order to design materials more rationally, it is of great significance to understand and predict doping behaviors of ions in inorganic crystals and impurity energy levels of doped inorganic crystals.
因此，为了更合理的进行材料设计，理解并预测离子在无机晶体中的掺杂行为以及掺杂无机晶体的杂质能级具有重要意义。